共 50 条
- [31] Lattice strain in AgGaS2 epitaxial layers grown on GaAs (100) by multisource evaporation Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1998, 37 (08): : 4527 - 4532
- [32] Large-area epitaxial CdTe(100) films grown on GaAs(100) substrates: MBE growth and substrate temperature effect Journal of the Korean Physical Society, 2021, 79 : 1057 - 1062
- [33] LATTICE STRAIN RELAXATION OF ZNS LAYERS GROWN BY VAPOR-PHASE EPITAXY ON (100)GAAS MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1994, 28 (1-3): : 55 - 60
- [35] Lattice strain in AgGaS2 epitaxial layers grown on GaAs (100) by multisource evaporation JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (08): : 4527 - 4532
- [37] Comparative optical studies of InGaAs/GaAs quantum wells grown by MBE on (100) and (311)A GaAs planes PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 7, 2012, 9 (07): : 1621 - 1623
- [39] Reduction of defects in GaP layers grown on Si(100) by MOCVD 2021 IEEE 48TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), 2021, : 1344 - 1347