ACCOMMODATION OF LARGE LATTICE MISMATCH OF GaP ON GaAs(100) AND GaAs ON GaP(100) LAYERS GROWN BY MBE.

被引：0
|
作者：
Nomura, Takashi [1 ]
Maeda, Yuuji [1 ]
Miyao, Masahiro [1 ]
Hagino, Minoru [1 ]
Ishikawa, Kenji [1 ]
机构：
[1] Shizuoka Univ, Hamamatsu, Jpn, Shizuoka Univ, Hamamatsu, Jpn
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes | 1987年 / 26卷 / 06期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：908 / 911
相关论文
共 50 条
  • [21] PHOTOLUMINESCENCE PROPERTIES OF MOVPE GROWN ZNTE LAYERS ON (100) GAAS AND (100) GASB
    WAGNER, HP
    KUHN, W
    GEBHARDT, W
    JOURNAL OF CRYSTAL GROWTH, 1990, 101 (1-4) : 199 - 203
  • [22] STRUCTURAL AND ANALYTICAL STUDIES OF GAAS AND GAP LAYERS GROWN ON SILICON
    ALJASSIM, MM
    BLAKESLEE, AE
    JONES, KM
    ASHER, SE
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1987, (87): : 99 - 104
  • [23] Dislocations and traps in MBE grown lattice mismatched p-InGaAs/GaAs layers on GaAs substrates
    Du, AY
    Li, MF
    Chong, TC
    Zhang, Z
    INFRARED APPLICATIONS OF SEMICONDUCTORS II, 1998, 484 : 617 - 623
  • [24] InGaP/InGaAs/GaAs pseudomorphic HEMT grown by solid source MBE.
    Aziz, AA
    Missous, M
    1996 HIGH PERFORMANCE ELECTRON DEVICES FOR MICROWAVE AND OPTOELECTRONIC APPLICATIONS WORKSHOP - EDMO, 1996, : 145 - 152
  • [25] Modeling of Be diffusion in GaAs layers grown by MBE
    Mosca, R
    Bussei, P
    Franchi, S
    Frigeri, P
    Gombia, E
    Carnera, A
    Peroni, M
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 91 : 508 - 511
  • [26] Optical properties of Mn-doped GaAs layers grown on (100) GaAs substrate
    Yoon, IT
    Leem, JH
    Kang, TW
    JOURNAL OF APPLIED PHYSICS, 2003, 93 (05) : 2544 - 2548
  • [27] Optical properties of Mn-doped GaAs layers grown on (100) GaAs substrate
    Yoon, I.T. (ityoon@dongguk.edu), 1600, American Institute of Physics Inc. (93):
  • [28] MBE GROWTH OF GAAS AND GAP ON SI(211)
    UPPAL, PN
    KROEMER, H
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 603 - 603
  • [29] Indirect band-gap tunnelling through a (100) GaAs/AlAs/GaAs heterostructure
    Marsh, A. C.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1986, 1 (05) : 320 - 326
  • [30] Large-area epitaxial CdTe(100) films grown on GaAs(100) substrates: MBE growth and substrate temperature effect
    Hwang, Younghun
    Van Quang Ngugen
    Choi, Jin San
    Park, Sujung
    Cho, Shinuk
    Kim, Tae Heon
    Ha, Yang
    Ahn, Chang Won
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2021, 79 (11) : 1057 - 1062
12345