Floating body effects in polysilicon thin-film transistors

被引：0
|
作者：
Univ of Bologna, Bologna, Italy [1 ]
机构：
来源：
IEEE Trans Electron Devices | / 12卷 / 2234-2241期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] CONDUCTIVITY PROPERTIES OF NARROW-CHANNEL POLYSILICON THIN-FILM TRANSISTORS
    YAMAUCHI, N
    HAJJAR, JJJ
    REIF, R
    NAKAZAWA, K
    TANAKA, K
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (11) : 2622 - 2623
  • [32] STUDY ON HYDROGENATION OF POLYSILICON THIN-FILM TRANSISTORS BY ION-IMPLANTATION
    CAO, M
    ZHAO, TM
    SARASWAT, KC
    PLUMMER, JD
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (06) : 1134 - 1140
  • [33] A SIMPLE EEPROM CELL USING TWIN POLYSILICON THIN-FILM TRANSISTORS
    CAO, M
    ZHAO, TM
    SARASWAT, KC
    PLUMMER, JD
    IEEE ELECTRON DEVICE LETTERS, 1994, 15 (08) : 304 - 306
  • [34] Correlation between the ageing and grain size of polysilicon thin-film transistors
    Toutah, H
    Tala-Ighil, B
    Llibre, JF
    Mohammed-Brahim, T
    Helen, Y
    Gautier, G
    Mourgues, K
    Raoult, F
    POLYCRYSTALLINE SEMICONDUCTORS IV MATERIALS, TECHNOLOGIES AND LARGE AREA ELECTRONICS, 2001, 80-81 : 343 - 348
  • [35] Characterization of polysilicon thin-film transistors with asymmetric source/drain implantation
    Shieh, MS
    Lin, YJ
    Yu, CM
    Lei, TF
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2005, 237 (1-2): : 223 - 227
  • [36] THIN-FILM SOI CMOS TRANSISTORS WITH P+-POLYSILICON GATES
    DAVIS, JR
    ARMSTRONG, GA
    THOMAS, NJ
    DOYLE, A
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (01) : 32 - 38
  • [37] LASER RECRYSTALLIZED POLYSILICON THIN-FILM TRANSISTORS FOR FLAT LC DISPLAY
    ISHIZU, A
    MATSUMOTO, T
    NISHIMURA, T
    AKASAKA, Y
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (08) : C327 - C327
  • [38] INTRINSIC CAPACITANCE OF AMORPHOUS-SILICON AND POLYSILICON THIN-FILM TRANSISTORS
    MARTIN, RA
    HACK, M
    SHAW, JG
    SHUR, M
    1989 INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, 1989, : 361 - 364
  • [39] Effects of Channel Width and Nitride Passivation Layer on Electrical Characteristics of Polysilicon Thin-Film Transistors
    Liao, Chia-Chun
    Lin, Min-Chen
    Chiang, Tsung-Yu
    Chao, Tien-Sheng
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (11) : 3812 - 3819
  • [40] IN-SITU PHOSPHORUS-DOPED VLPCVD POLYSILICON LAYERS FOR POLYSILICON THIN-FILM TRANSISTORS
    SARRET, M
    LIBA, A
    BONNAUD, O
    LEBIHAN, F
    FORTIN, B
    PICHON, L
    RAOULT, F
    IEE PROCEEDINGS-CIRCUITS DEVICES AND SYSTEMS, 1994, 141 (01): : 19 - 22
12345