Characterizing wearout, breakdown, and trap generation in thin silicon oxide

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Clemson Univ, Clemson, United States [1 ]
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J Vac Sci Technol B | / 4卷 / 1780-1787期
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the help of the graduate students who have worked in; and are still working in the Center for Semiconductor Device Reliability Research at Clemson University for most of the data and ideas presented in this paper. Both G. A. Brown and T. G. Lewis of Texas Instruments provided industrial strength oxides and oxynitrides used by the graduate students; and provided many useful insights into processes taking place inside the oxides during wearout. L. Lie of LSI Logic Corp. and J. Mitros of SEMATECH provided high quality oxides in the 4-13 nm thickness range. B. T. Moore of AMD provided constant-current stress data. This work was supported by the Semiconductor Research Corporation;
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