Fabrication of perovskite (Pb,La)(Zr,Ti)O3 thin films by electron cyclotron resonance plasma enhanced chemical vapor deposition

被引：0

作者：

Shin, Joong-Shik ^{[1
]}

No, Kwang-Soo ^{[1
]}

Lee, Won-Jong ^{[1
]}

机构：

[1] KAIST, Taejon, Korea, Republic of

来源：

| 1997年 / JJAP, Minato-ku, Japan卷 / 36期

关键词：

Experimental; (EXP);

D O I：

暂无

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学科分类号：

摘要：

Lanthanum-modified lead zirconate titanate (PLZT) thin films were fabricated by electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR-PECVD) using MO sources. The composition of the PLZT films could be controlled by varying the flow rate of each MO source. Perovskite PLZT thin films with a smooth surface and fine grains were successfully fabricated on Pt/Ti/SiO2/Si at 450 °C. The deposition mechanism of the PLZT films in the ECR plasma was studied by examining the rate of incorporation of each cation into the film at various MO source flow rates. The microstructure of the deposited films and RTA treatment effects were also evaluated.

引用

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[1] Fabrication of perovskite (Pb,La)(Zr,Ti)O-3 thin films by electron cyclotron resonance plasma enhanced chemical vapor deposition
Shin, JS
No, KS
Lee, WJ
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1997, 36 (2B): : L223 - L226
[2] Effects of seed layers on the characteristics of (Pb,La)(Zr,Ti)O3 thin films prepared by electron cyclotron resonance plasma enhanced chemical vapor deposition
Shin, JS
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JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (11): : 6909 - 6914
[3] Effects of seed layers on the characteristics of (Pb,La)(Zr,Ti)O3 thin films prepared by electron cyclotron resonance plasma enhanced chemical vapor deposition
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[4] Effects of electrodes on the electric properties of Pb(Zr,Ti)O3 films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition
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[5] Effects of electrodes on the electric properties of Pb(Zr,Ti)O3 films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition
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[6] The effects of substrate temperature and lead precursor flow rate on the fabrication of (Pb,La)(Zr,Ti)O-3 thin films by electron cyclotron resonance plasma-enhanced chemical vapor deposition
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[7] Fabrication of ferroelectric Pb(Zr,Ti)O3 thin films by spray metalorganic chemical vapor deposition
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[8] (Pb,La)(Zr,Ti)O3 thin films prepared by electron cyclotron resonance plasma enhanced chemical vapor deposition for the charge storage capacitor of a gigabit-scale dynamic random access memory
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[9] (Pb,La)(Zr,Ti)O3 thin films prepared by electron cyclotron resonance plasma enhanced chemical vapor deposition for the charge storage capacitor of a gigabit-scale dynamic random access memory
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[10] Metalorganic chemical vapor deposition of ferroelectric Pb(Zr,Ti)O3 thin films
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