Factors influencing the design and performance of 4H-SiC GTO thyristors

被引：0
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作者：
Fedison, J.B. [1 ]
Chow, T.P. [1 ]
Ghezzo, M. [2 ]
Kretchmer, J.W. [2 ]
Nielsen, M.C. [2 ]
机构：
[1] Ctr. Intgd. Electronics E., Rensselaer Polytechnic Institute, Troy, NY 12180-3590, United States
[2] Research and Development Center, General Electric Corporate, Schenectady, NY 12301, United States
来源：
Materials Science Forum | 2000年 / 338卷
关键词：
Bipolar junction transistors - Epilayers - Voltage drop;
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