Photoconductivity in n-type QQ -FeSi2 single crystals

被引：0
|
作者：
机构：
来源：
Phys Rev B | / 1卷 / 20期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] PHOTOCONDUCTIVITY IN N-TYPE BETA-FESI2 SINGLE-CRYSTALS
    ARUSHANOV, E
    BUCHER, E
    KLOC, C
    KULIKOVA, O
    KULYUK, L
    SIMINEL, A
    PHYSICAL REVIEW B, 1995, 52 (01): : 20 - 23
  • [2] Solution growth of n-type β-FeSi2 single crystals using Sn solvent
    Udono, Haruhiko
    Matsumura, Kazutaka
    Osugi, Isao J.
    Kikuma, Isao
    JOURNAL OF CRYSTAL GROWTH, 2005, 275 (1-2) : E1967 - E1974
  • [3] Preparation and properties of FeSi, α-FeSi2 and β-FeSi2 single crystals
    1600, Elsevier Science S.A., Lausanne, Switzerland (219): : 1 - 2
  • [4] Solution growth of n-type β-FeSi2 single crystals using Ni-doped Zn solvent
    Udono, Haruhiko
    Aoki, Yuta
    Suzuki, Hirokazu
    Kikuma, Isao
    JOURNAL OF CRYSTAL GROWTH, 2006, 292 (02) : 290 - 293
  • [5] Photoresponse properties of Al/n-β-FeSi2 Schottky diodes using β-FeSi2 single crystals
    Ootsuka, Teruhisa
    Fudamoto, Yasunori
    Osamura, Masato
    Suemasu, Takashi
    Makita, Yunosuke
    Fukuzawa, Yasuhiro
    Nakayama, Yasuhiko
    APPLIED PHYSICS LETTERS, 2007, 91 (14)
  • [6] PHOTOCONDUCTIVITY OF N-TYPE CULNSE2 SINGLE-CRYSTALS
    ABDINOV, AS
    MAMEDOV, VK
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (05): : 526 - 528
  • [7] PHOTOCONDUCTIVITY OF n-TYPE CuInSe2 SINGLE CRYSTALS.
    Abdinov, A.Sh.
    Mamedov, V.K.
    Soviet physics. Semiconductors, 1980, 14 (05): : 526 - 528
  • [8] Arsenic doping of n-type β-FeSi2 films by sputtering method
    Liu, Zhengxin
    Osamura, Masato
    Ootsuka, Teruhisa
    Kuroda, Ryo
    Fukuzawa, Yasuhiro
    Mise, Takahiro
    Otogawa, Naotaka
    Nakayama, Yasuhiko
    Tanoue, Hisao
    Makita, Yunosuke
    Japanese Journal of Applied Physics, Part 2: Letters, 2005, 44 (8-11):
  • [9] Phase transformation in an n-type FeSi2 processed by mechanical alloying
    Ur, SC
    Kim, IH
    Lee, JI
    Cho, KW
    Nash, P
    XXI INTERNATIONAL CONFERENCE ON THERMOELECTRICS, PROCEEDINGS ICT '02, 2002, : 114 - 117
  • [10] Arsenic doping of n-type β-FeSi2 films by sputtering method
    Liu, ZX
    Osamura, M
    Ootsuka, T
    Kuroda, R
    Fukuzawa, Y
    Mise, T
    Otogawa, N
    Nakayama, Y
    Tanoue, H
    Makita, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (8-11): : L261 - L264
12345