ABSORPTIVITY OF THE X1 SIGMA -A2 PI AND X1 SIGMA - SIGMA 1 SIGMA ELECTRON BANDS OF HIGH-TEMPERATURE SiO VAPOR.

被引：0

作者：

Matveev, V.S.

机构：

来源：

Journal of applied spectroscopy | 1986年 / 45卷 / 02期

关键词：

BAND STRUCTURE - Spectrum analysis;

D O I：

10.1007/BF00657454

中图分类号：

学科分类号：

摘要：

This paper shows the possibility of calculating the absorption characteristics of the most intense X**1 SIGMA -A**1 PI and X**1 SIGMA -E**1 SIGMA bands of SiO vapor in the 2000-10,000 degree K temperature range, by means of a random Elzasser band model approximated to a composite line contour. The random Elzasser band model consists of a statistical superposition of the different Elzasser subbands, each with its own parameters.

引用

页码：769 / 773