CRITICAL TRANSPORT PROPERTIES OF DOPED SEMICONDUCTORS.

被引：0

作者：

Kaveh, M. ^{[1
]}

Mott, N.F. ^{[1
]}

机构：

[1] Bar-Ilan Univ, Ramat-Gan, Isr, Bar-Ilan Univ, Ramat-Gan, Isr

来源：

Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties | 1987年 / 55卷 / 01期

关键词：

DIELECTRIC PROPERTIES - Calculations - ELECTRIC CONDUCTIVITY - Calculations;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

It is shown that the role of valley degeneracy is essential in enhancing the Hartree interaction terms over the exchange terms and thereby causing different critical transport properties in doped semiconductors. We predict, following the arguments of M. Kaveth, that for uncompensated many-valley semiconductors, the critical conductivity exponent is v equals one-half and the critical exponent for the dielectric constant is 2v equals 1.

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页码：1 / 8