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POPULATION INVERSION AND FAR IR EMISSION OF HOT HOLES IN Ge IN CROSSED ELECTRIC AND MAGNETIC FIELDS.
被引：0
作者：
Chebotarev, A.P.
Murzin, V.N.
Stoklitsky, S.A.
Ivanov, Yu.L.
Vasiliev, Yu.B.
Andronov, A.A.
Chernobrovtseva, M.D.
Gavrilenko, V.I.
Kozlov, V.A.
Krasilnik, Z.F.
Mazov, L.S.
Nefedov
01
Chebotarev, A.P.
Acad of Sciences of the USSR, Lebedev Physical In0-80
机构：
来源：
Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics
|
1982年
/
117-118卷
/
Pt I期
关键词：
LASERS;
SEMICONDUCTOR;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The extensive investigations of hot holes population inversion and the possibility of FIR laser action in Ge in crossed electric E and magnetic H fields are given via observation of FIR luminescence and the Monte-Carlo simulation. It is demonstrated that the light-heavy hole intersubband inversion is sustained in doped samples providing the hole amplification coefficient up to ten percent per centimeter.
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页码：229 / 231
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