MBE grown AlGaN/GaN MODFETs with high breakdown voltage

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作者：

Daimler Chrysler, Res. Technol., Wilhelm-Runge-S., Ulm, Germany ^{[1
]}

不详 ^{[2
]}

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来源：

J Cryst Growth | / 327-331期

关键词：

Current density - Electric breakdown of solids - Metallorganic chemical vapor deposition - Molecular beam epitaxy - Reactive ion etching - Sapphire - Semiconductor doping - Semiconductor growth - Substrates;

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摘要：

Results of the evaluation of the breakdown performance of AlGaN/GaN modulation doped field effect transistors (MODFET) grown by MBE are presented. The dependence of breakdown voltage on gate-drain spacing for different AlGaN/MODFETs grown by MBE on sapphire is analyzed. The maximum achieved breakdown voltage was 410 V for devices with 200 mA/mm open channel current and 6.2 μm gate-drain spacing demonstrating the potential of MBE grown material for high-voltage operation.

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