MBE grown AlGaN/GaN MODFETs with high breakdown voltage

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作者：
Daimler Chrysler, Res. Technol., Wilhelm-Runge-S., Ulm, Germany [1 ]
不详 [2 ]
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来源：
J Cryst Growth | / 327-331期
关键词：
Current density - Electric breakdown of solids - Metallorganic chemical vapor deposition - Molecular beam epitaxy - Reactive ion etching - Sapphire - Semiconductor doping - Semiconductor growth - Substrates;
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摘要：
Results of the evaluation of the breakdown performance of AlGaN/GaN modulation doped field effect transistors (MODFET) grown by MBE are presented. The dependence of breakdown voltage on gate-drain spacing for different AlGaN/MODFETs grown by MBE on sapphire is analyzed. The maximum achieved breakdown voltage was 410 V for devices with 200 mA/mm open channel current and 6.2 μm gate-drain spacing demonstrating the potential of MBE grown material for high-voltage operation.
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