INTRINSIC CARRIER DENSITY AND PARAMETERS OF THE HEAVY-HOLE BAND NARROW-GAP Pb1 - xSnxTe CRYSTALS.

被引：0

作者：

Sizov, F.F. ^{[1
]}

Teterkin, V.V. ^{[1
]}

Plyatsko, S.V. ^{[1
]}

机构：

[1] Acad of Sciences of the Ukrainian, SSR, Inst of Semiconductors, Kiev,, USSR, Acad of Sciences of the Ukrainian SSR, Inst of Semiconductors, Kiev, USSR

来源：

Soviet physics. Semiconductors | 1984年 / 18卷 / 09期

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摘要：

引用

页码：1006 / 1008

共 46 条

[41] RELATIONSHIP BETWEEN THE CHARACTERISTICS OF ELECTROPHYSICAL PROPERTIES AND THE BAND-GAP OF PB1-XSNXTE-CD SINGLE-CRYSTALS
CHASHCHIN, SP
GUZHOVA, IP
BARYSHEV, NS
KHARIONOVSKII, YS
EZHOVA, LN
AVERYANOV, IS
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (07): : 806 - 806
[42] THE MN IMPURITY ENERGY-STATE AND ITS INFLUENCE ON THE KINETIC, OPTICAL AND MAGNETIC-PROPERTIES OF NARROW-GAP PB1-XSNXTE SOLID-SOLUTIONS
LASHKAREV, GV
RADCHENKO, MV
SIZOV, FF
SLYNKO, EI
TETYORKIN, VV
UKRAINSKII FIZICHESKII ZHURNAL, 1981, 26 (07): : 1173 - 1176
[43] MAGNETICALLY AND ELECTRICALLY ACTIVE STATES OF MANGANESE IN NARROW-GAP PB1-XSNXTE (0.18LESS-THAN-OR-EQUAL-TO X LESS-THAN-OR-EQUAL-TO 0.23) SEMICONDUCTORS
LASHKAREV, GV
KIKODZE, RO
RADCHENKO, MV
SLYNKO, EI
MARCHUK, IZ
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (08): : 902 - 906
[44] Activation-controlled conduction and metal-insulator transition in the impurity band of narrow-gap p-Hg1−xCdxTe doped crystals
V. V. Bogoboyashchii
S. G. Gasan-zade
G. A. Shepel’skii
Semiconductors, 2000, 34 : 398 - 404
[45] Activation-controlled conduction and metal-insulator transition in the impurity band of narrow-gap p-Hg1-xCdxTe doped crystals
Bogoboyashchii, VV
Gasan-zade, SG
Shepel'skii, GA
SEMICONDUCTORS, 2000, 34 (04) : 398 - 404
[46] EMPIRICAL EXPRESSIONS FOR THE ALLOY COMPOSITION AND TEMPERATURE-DEPENDENCE OF THE BAND-GAP AND INTRINSIC CARRIER DENSITY IN GAXIN1-XAS
PAUL, S
ROY, JB
BASU, PK
JOURNAL OF APPLIED PHYSICS, 1991, 69 (02) : 827 - 829

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