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- [2] Injection currents in narrow-gap (Pb1−xSnxTe):In insulators Semiconductors, 2005, 39 : 533 - 538
- [3] Photoconductivity of the narrow-gap Pb1 − xSnxTe(In) semiconductors in the terahertz spectral range JETP Letters, 2010, 91 : 35 - 37
- [4] STUDIES OF INTERBAND MAGNETOREFLECTION SPECTRA AND BAND PARAMETERS IN NARROW GAP SEMICONDUCTOR Pb1 - xSnxTe. Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1988, 9 (01): : 7 - 14
- [5] THE PROPERTIES OF THE BAND SPECTRUM PARAMETERS IN THE BAND-INVERSION REGION OF NARROW-GAP PB1-XSNXTE PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1986, 135 (02): : 587 - 596
- [6] Probing of local electron states in Pb1 − xSnxTe(In) narrow-gap semiconductors by laser terahertz radiation JETP Letters, 2013, 97 : 720 - 726
- [7] SPIN SPLITTING IN NARROW-GAP SEMICONDUCTORS PB1-XSNXTE IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1987, 30 (08): : 78 - 83
- [8] THE LASER-IRRADIATED TRANSFORMATION OF INTRINSIC AND IMPURITY DEFECTS IN NARROW-GAP PB1-XSNXTE INFRARED PHYSICS, 1987, 27 (04): : 249 - 252