FORMATION OF A TiSi2/n + POLY-Si LAYER BY RAPID LAMP HEATING AND ITS APPLICATION TO MOS DEVICES.

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作者：
Yachi, T. [1 ]
机构：
[1] NTT, Musashino Electrical, Communication Lab, Tokyo, Jpn, NTT, Musashino Electrical Communication Lab, Tokyo, Jpn
来源：
Electron device letters | 1984年 / EDL-5卷 / 07期
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摘要：
11
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页码：217 / 220
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