PTCR effect in semiconducting Ba1-xSrxTiO3 ceramics by Bi2O3 vapor doped during sintering

被引：0

作者：

Qi, Jianquan ^{[1
]}

Gui, Zhilun ^{[1
]}

Li, Longtu ^{[1
]}

Chen, Wanping ^{[1
]}

机构：

[1] Tsinghua Univ, Beijing, China

来源：

Yadian Yu Shengguang/Piezoelectrics and Acoustooptics | 1998年 / 20卷 / 06期

关键词：

Crystal defects - Positive temperature coefficient - Semiconductor doping;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Barium vacancy existing in grain boundary is responsible for the PTCR effect observed in donor doped barium titanate ceramics. Over 8 orders of magnitude of PTCR effect were observed in Bi2O3 vapor doped samples. In Bi2O3 vapor doping procedure, high concentration of barium vacancy can be produced under high oxygen partial pressure during sintering, so the sample obtained has higher PTCR effect.

引用

页码：408 / 410