Diffusion barriers in semiconductor contact metallization

被引：0

作者：

Kattelus, Hannu ^{[1
]}

机构：

[1] Semiconductor Lab, Finland

来源：

Valtion Teknillinen Tutkimuskeskus, Tutkimuksia | 1988年 / 48期

关键词：

Electric Contacts - Integrated Circuit Manufacture - Semiconductor Materials--Metallizing - Titanium Compounds--Diffusion - Tungsten Nitrogen Alloys--Diffusion;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

New ways to stabilize semiconductor contact metallization by incorporating a diffusion barrier layer are reviewed. Diffusion barriers are classifed in terms of their structure or their relative stability at elevated temperatures. Certain compounds or alloys show better performance than simple metals. Multilayer configurations to optimize the overall contact performance are considered. Experimental investigations concentrate on properties of tungsten-nitrogen alloys and titanium nitride for the application as diffusion barriers in silicon and gallium arsenide metallization schemes. Nitrogen is shown to stabilize tungsten barriers unless metallurgical contact to highly reactive metals such as titanium is made: at high temperatures titanium is able to reduce tungsten-nitrogen alloys. In ohmic contacts to gallium arsenide, titanium nitride is shown to enhance thermal stability. Properties of sputter-deposited titanium nitride films are, however, greatly affected by deposition parameters, such as pressure or bias voltage.

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