MINIATURIZED GaAs FET AMPLIFIER.

被引：0
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作者：
Hidaka, Norio
Takeuchi, Yukihiro
Shima, Takao
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来源：
Fujitsu Scientific and Technical Journal | 1980年 / 16卷 / 02期
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摘要：
Miniaturized wide-band GaAs FET balanced amplifiers with lumped elements were constructed on a 4 mm multiplied by 5 mm sapphire substrate using thin-film techniques. Circuit elements were determined using a computer simulation program to achieve the desired performance, and circuits were designed to be as simple as possible to miniaturize the amplifier. These amplifiers have 8 db gain from 4 to 8 GHz, and 6 db gain from 4 to 12 GHz.
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页码：77 / 93
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