The filtered vacuum arc deposition technique is used for deposition of semiconducting thin films of amorphous silicon and transparent tin oxide. The deposition process is presented, including aspects of controlling the location and motion of the cathode spots, and transport of the plasma through the macroparticle filter. Characterization of the microstructure of the films is presented, as well the measurement of the films conductiveness. Finally, the potential applications for these films are surveyed. Based on the study, it is found that the deposition rates achieved by this technique for the semiconductor films are an order of magnitude greater than achieved with conventional methods, while the conductiveness are equivalent or better.