RADIATION-HARDENED SILICON-ON-INSULATOR JUNCTION FIELD-EFFECT TRANSISTORS FABRICATED BY A SELF-ALIGNED PROCESS.

被引：0

作者：

Choi, Hong K. ^{[1
]}

Tsaur, Bor-Yeu ^{[1
]}

Chen, C.K. ^{[1
]}

机构：

[1] MIT Lincoln Lab, Lexington, MA, USA, MIT Lincoln Lab, Lexington, MA, USA

来源：

Electron device letters | 1987年 / EDL-8卷 / 03期

关键词：

Compendex;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：101 / 103

共 6 条

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[6] Characteristics of La2O3-and Al2O 3-capped HfO2 dielectric metal-oxide-semiconductor field-effect transistors fabricated on (110)-oriented silicon substrates
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