Deactivation in heavily arsenic-doped silicon

被引：0
|
作者：
机构：
来源：
Appl Phys Lett | / 12卷 / 1492期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] Activation and deactivation in heavily boron-doped silicon
    Yoo, SH
    Ro, JS
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2003, 43 (02) : 290 - 295
  • [32] The determination of arsenic atom concentration in arsenic-doped silicon by using HOLZ analysis
    Hashikawa, N
    Watanabe, K
    Kikuchi, Y
    Oshima, Y
    Hashimoto, I
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1996, 154 (02): : 531 - 541
  • [33] REFLECTANCE VS ELECTROREFLECTANCE MEASUREMENTS ON ARSENIC-DOPED SILICON CRYSTAL
    BORGHESI, A
    GEDDO, M
    GUIZZETTI, G
    MAGHINI, D
    STELLA, A
    CAMPISANO, U
    RIMINI, E
    NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS, 1988, 10 (08): : 979 - 988
  • [34] Arsenic-doped poly-silicon emitter RCA transistor
    Zhang, Lichun
    Ye, Hongfei
    Jin, Xuelin
    Gao, Yuzhi
    Ning, Baojun
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2000, 21 (07): : 697 - 704
  • [35] ANNEALING OF IRRADIATION-INDUCED DEFECTS IN ARSENIC-DOPED SILICON
    EVWARAYE, AO
    JOURNAL OF APPLIED PHYSICS, 1977, 48 (05) : 1840 - 1843
  • [36] STRUCTURAL-PROPERTIES OF ULTRATHIN ARSENIC-DOPED LAYERS IN SILICON
    DENHOFF, MW
    JACKMAN, TE
    MCCAFFREY, JP
    JACKMAN, JA
    LENNARD, WN
    MASSOUMI, G
    APPLIED PHYSICS LETTERS, 1989, 54 (14) : 1332 - 1334
  • [37] RAMAN-SCATTERING AND PHOTOLUMINESCENCE IN BORON-DOPED AND ARSENIC-DOPED SILICON
    CHERLOW, JM
    AGGARWAL, RL
    LAX, B
    PHYSICAL REVIEW B, 1973, 7 (10): : 4547 - 4560
  • [38] Complex dynamical phenomena in heavily arsenic doped silicon
    Ramamoorthy, M
    Pantelides, ST
    PHYSICAL REVIEW LETTERS, 1996, 76 (25) : 4753 - 4756
  • [39] Clustering equilibrium and deactivation kinetics in arsenic doped silicon
    Nobili, D
    Solmi, S
    Shao, J
    JOURNAL OF APPLIED PHYSICS, 2001, 90 (01) : 101 - 107
  • [40] OBSERVATIONS OF IMPURITY INHOMOGENEITIES IN ARSENIC-DOPED SILICON BY SCANNING LASER MICROSCOPY
    JUNGBLUTH, ED
    APPLIED PHYSICS LETTERS, 1970, 17 (10) : 437 - +
12345