Proposal for a Large Signal FET Equivalent Circuit.

It is shown, that the comprehensive set of equations, describing the behavior of FET's in the full range of all possible transistor states, can be represented by a simple equivalent circuit. This circuit has a minimum of elements such as current sources, voltages, resistances and ideal diodes, which are arranged in such a way that a good correspondence to the physical construction of FET's is obtained. The equivalent circuit is completed by a capacities and non-ideal diodes in order to comprise all the well known nonlinear and dynamic effects.