Thermal stability of B-doped SiGe layers formed on Si substrates by Si-GeH4-B2H6 molecular beam epitaxy

被引：0

作者：

Karasawa, Takeshi ^{[1
]}

Kunii, Yasuo ^{[1
]}

Tabe, Michiharu ^{[1
]}

机构：

[1] Nippon Telegraph and Telephone Corp, Kanagawa, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1993年 / 32卷 / 3 A期

关键词：

Annealing - Boron - Composition effects - Crystal structure - Diffusion - Dislocations (crystals) - Germanium - Molecular beam epitaxy - Relaxation processes - Semiconductor doping - Strain - Thermodynamic stability;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The thermal stability of B-doped SiGe layers formed on Si substrates is studied, using samples prepared by Si-GeH4-B2H6 molecular beam epitaxy. Strain relaxation and the diffusion of Ge and B in the samples are measured after heat treatment corresponding to heterostructure bipolar transistor (HBT) fabrication processes. The strain in the SiGe layer remains almost constant during annealing at up to 950 °C for 30 min, while some misfit dislocations are formed above 800 °C in samples with relatively high Ge content (>10 at.%). Ge diffusion is negligible up to 950 °C, but B atoms diffuse considerably even if the temperature for 30 min annealing is as low as 850 °C. Accordingly, the formation of misfit dislocations and B diffusion are the dominant factors limiting the Ge content and thermal treatments in HBT processes.

引用

页码：1039 / 1044