Process integration, architecture and simulation of a GHz-BiCMOS ULSI technology

被引：0

作者：

Dwivedi, V.K. ^{[1
]}

Singh, N.B. ^{[1
]}

Pyne, D. ^{[1
]}

Johri, S. ^{[1
]}

Virdi, G.S. ^{[1
]}

机构：

[1] Central Electronics Engineering, Research Inst, Pilani, India

来源：

关键词：

Application specific integrated circuits (ASICs) - Device simulator SEDAN - Inhouse device simulator MOSKIT - Process simulator SUPREM;

D O I：

10.1016/0026-2692(93)90022-7

中图分类号：

学科分类号：

摘要：

引用

页码：773 / 785