Disordered Si/SiGe superlattices grown by ultrahigh vacuum chemical vapor deposition

被引:0
|
作者
Natl Nano Device Lab, Hsinchu, Taiwan [1 ]
机构
来源
Appl Surf Sci | / 1-4卷 / 119-123期
关键词
This work was performed at the National Nano Device Laboratory which was supported in part by the National Science Council of Republic of China under contract No. NSC 82-0404-E009-233;
D O I
暂无
中图分类号
学科分类号
摘要
6
引用
收藏
相关论文
共 50 条
  • [31] Analysis of SiGe/Si quantum dot superlattices grown by low-pressure chemical vapor deposition for thin solar cells
    Lee, Minjoo Larry
    Dezsi, Geza
    Venkatasubramanian, Rama
    THIN SOLID FILMS, 2010, 518 : S76 - S79
  • [32] On the intrinsic spacer layer in Si/SiGe heterojunction bipolar transistor grown by ultra high vacuum chemical vapor deposition
    Zhang, JS
    Jin, XJ
    Chen, PY
    Tsien, PH
    Lo, TC
    IEEE/CORNELL CONFERENCE ON ADVANCED CONCEPTS IN HIGH SPEED SEMICONDUCTOR DEVICES AND CIRCUITS, PROCEEDINGS, 1997, : 109 - 115
  • [33] Influence of Si precursor type on the surface roughening of SiGe epitaxial layers deposited by ultrahigh vacuum chemical vapor deposition method
    Kim, Youngmo
    Yoon, Sungyeol
    Ko, Daehong
    Sohn, Hyunchul
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2017, 35 (04):
  • [34] Epitaxial Si1-xGex grown into fine contact hole by ultrahigh-vacuum chemical vapor deposition
    Nakahata, T
    Sugihara, K
    Furukawa, T
    Yamakawa, S
    Maruno, S
    Tokuda, Y
    Yamamoto, K
    Inagaki, T
    Kiyama, H
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 68 (03): : 171 - 174
  • [35] Surface defect formation in epitaxial Si grown on boron-doped substrates by ultrahigh vacuum chemical vapor deposition
    Furukawa, T.
    Nakahata, T.
    Maruno, S.
    Tanimura, J.
    Tokuda, Y.
    Satoh, S.
    1600, Japan Society of Applied Physics (40):
  • [36] Surface defect formation in epitaxial Si grown on boron-doped substrates by ultrahigh vacuum chemical vapor deposition
    Furukawa, T
    Nakahata, T
    Maruno, S
    Tanimura, J
    Tokuda, Y
    Satoh, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2001, 40 (10A): : L1051 - L1053
  • [37] High quality Ge epitaxial layers on Si by ultrahigh vacuum chemical vapor deposition
    Kim, Hyun-Woo
    Shin, Keun Wook
    Lee, Gun-Do
    Yoon, Euijoon
    THIN SOLID FILMS, 2009, 517 (14) : 3990 - 3994
  • [38] Ultrathin low temperature SiGe buffer for the growth of high quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition
    Loh, T. H.
    Nguyen, H. S.
    Tung, C. H.
    Trigg, A. D.
    Lo, G. Q.
    Balasubramanian, N.
    Kwong, D. L.
    Tripathy, S.
    APPLIED PHYSICS LETTERS, 2007, 90 (09)
  • [39] Noncontact minority carrier lifetime measurement of Si and SiGe epilayers prepared by ultrahigh vacuum electron cyclotron resonance chemical vapor deposition
    Hwang, SH
    Eo, YP
    Seo, JH
    Whang, KW
    Yoon, E
    Tae, HS
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1996, 14 (03): : 1033 - 1036
  • [40] THE THERMAL-STABILITY OF SIGE FILMS DEPOSITED BY ULTRAHIGH-VACUUM CHEMICAL VAPOR-DEPOSITION
    STIFFLER, SR
    COMFORT, JH
    STANIS, CL
    HARAME, DL
    DEFRESART, E
    MEYERSON, BS
    JOURNAL OF APPLIED PHYSICS, 1991, 70 (03) : 1416 - 1420