Disordered Si/SiGe superlattices grown by ultrahigh vacuum chemical vapor deposition

被引：0
|
作者：
Natl Nano Device Lab, Hsinchu, Taiwan [1 ]
机构：
来源：
Appl Surf Sci | / 1-4卷 / 119-123期
关键词：
This work was performed at the National Nano Device Laboratory which was supported in part by the National Science Council of Republic of China under contract No. NSC 82-0404-E009-233;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
6
引用
收藏
相关论文
共 50 条
  • [21] Interwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum chemical vapor deposition
    Rui Wang
    Soon Fatt Yoon
    Fen Lu
    Wei Jun Fan
    Chong Yang Liu
    Ter-Hoe Loh
    Hoai Son Nguyen
    Balasubramanian Narayanan
    Nanoscale Research Letters, 2
  • [22] Interwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum chemical vapor deposition
    Wang, Rui
    Yoon, Soon Fatt
    Lu, Fen
    Fan, Wei Jun
    Liu, Chong Yang
    Loh, Ter-Hoe
    Nguyen, Hoai Son
    Narayanan, Balasubramanian
    NANOSCALE RESEARCH LETTERS, 2007, 2 (03): : 149 - 154
  • [23] Si deposition into fine contact holes by ultrahigh-vacuum chemical vapor deposition
    Nakahata, T
    Maruno, S
    Yamakawa, S
    Furukawa, T
    Tokuda, Y
    Satoh, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (7A): : 4045 - 4046
  • [24] Si deposition into fine contact holes by ultrahigh-vacuum chemical vapor deposition
    Nakahata, Takumi
    Maruno, Shigemitsu
    Yamakawa, Satoshi
    Furukawa, Taisuke
    Tokuda, Yasunori
    Satoh, Shinichi
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1999, 38 (7 A): : 4045 - 4046
  • [25] Carbon incorporation in SiGeC alloys grown by ultrahigh vacuum chemical vapor deposition
    Mocuta, AC
    Greve, DW
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1999, 17 (04): : 1239 - 1243
  • [26] (100) ORIENTED POLY-SI FILM GROWN BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION
    TANIKAWA, A
    TATSUMI, T
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1994, 141 (10) : 2848 - 2851
  • [27] Properties of Si1-x-yGexCy epitaxial films grown by ultrahigh vacuum chemical vapor deposition
    John, S
    Quinones, EJ
    Ferguson, B
    Ray, SK
    Anantharam, B
    Middlebrooks, S
    Mullins, CB
    Ekerdt, J
    Rawlings, J
    Banerjee, SK
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1999, 146 (12) : 4611 - 4618
  • [28] Interfacial study of Si-Ge multilayers grown using ultrahigh-vacuum chemical vapor deposition
    Lian, Derming
    Wen, Hua-Chiang
    INTERNATIONAL JOURNAL OF MATERIALS RESEARCH, 2013, 104 (06) : 542 - 546
  • [29] High Quality SiGe Layer Deposited by a New Ultrahigh Vacuum Chemical Vapor Deposition System
    Guangli LUO
    JournalofMaterialsScience&Technology, 2000, (01) : 94 - 96
  • [30] High quality SiGe layer deposited by a new ultrahigh vacuum chemical vapor deposition system
    Luo, GL
    Lin, XF
    Chen, PY
    Tsian, PX
    JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY, 2000, 16 (01) : 94 - 96
12345