共 50 条
- [2] Characterization of Si/SiGe strained-layer superlattices grown by an ultrahigh vacuum/chemical vapor deposition technique Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1994, 33 (4 A): : 1787 - 1792
- [3] Nanometer thick Si/SiGe strained-layer superlattices grown by an ultrahigh vacuum/chemical vapor deposition technique 1600, American Inst of Physics, Woodbury, NY, USA (75):
- [4] Interfacial abruptness in Si/SiGe heteroepitaxy grown by ultrahigh vacuum chemical vapor deposition Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1997, 36 (9 A): : 5680 - 5687
- [5] Interfacial abruptness in Si/SiGe heteroepitaxy grown by ultrahigh vacuum chemical vapor deposition JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (9A): : 5680 - 5687
- [6] CHARACTERIZATION OF SI/SIGE STRAINED-LAYER SUPERLATTICES GROWN BY AN ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION TECHNIQUE JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (4A): : 1787 - 1792