Anharmonicity of the CAs local oscillator in gallium arsenide

被引:0
|
作者
Alt, H.Ch. [1 ]
机构
[1] Fachhochschule Muenchen, Muenchen, Germany
来源
Materials Science Forum | 1995年 / 196-201卷 / pt 4期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:1577 / 1582
相关论文
共 50 条
  • [1] Anharmonicity of the C-As local oscillator in gallium arsenide
    Alt, HC
    ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, 1995, 196- : 1577 - 1581
  • [2] Ab initio study of the CAs local oscillator in gallium arsenide
    Petzke, K
    Gobel, C
    Schrepel, C
    Scherz, U
    DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, 1997, 258-2 : 861 - 866
  • [3] Ab initio study of the CAs local oscillator in gallium arsenide
    Petzke, K.
    Goebel, C.
    Schrepel, C.
    Scherz, U.
    Materials Science Forum, 1997, 258-263 (pt 2): : 861 - 866
  • [4] THE EFFECTS OF ANHARMONICITY ON THE VIBRATIONS OF HYDROGEN IMPURITY PAIRS IN GALLIUM-ARSENIDE
    NEWMAN, RC
    PHYSICA B, 1991, 170 (1-4): : 409 - 412
  • [5] 50 GHZ GALLIUM-ARSENIDE IMPATT OSCILLATOR
    GIBBONS, G
    GOKGOR, HS
    WICKENS, PR
    PURCELL, JJ
    ELECTRONICS LETTERS, 1972, 8 (21) : 513 - &
  • [6] Local structure of Mn implanted in gallium arsenide
    Chen, C. H.
    Niu, H.
    Cheng, C. Y.
    Hsieh, H. H.
    Yu, Y. C.
    Wu, S. C.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2007, 261 (1-2): : 570 - 573
  • [7] LOCAL MODES OF VIBRATION OF ISOELECTRONIC IMPURITIES IN GALLIUM PHOSPHIDE AND GALLIUM ARSENIDE
    ALLEN, JW
    JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1970, 3 (02): : L48 - &
  • [8] Toxicity of indium arsenide, gallium arsenide, and aluminium gallium arsenide
    Tanaka, A
    TOXICOLOGY AND APPLIED PHARMACOLOGY, 2004, 198 (03) : 405 - 411
  • [9] NUMERICAL STUDY OF AN N-GALLIUM ARSENIDE DIODE DISTRIBUTED OSCILLATOR
    AISHIMA, A
    FUKUSHIMA, Y
    JOURNAL OF APPLIED PHYSICS, 1984, 56 (04) : 1086 - 1092
  • [10] Gallium arsenide
    Nguyen, Ryan H.
    IEEE Potentials, 1999, 17 (05): : 33 - 35