Study of the structure of porous silicon via positron annihilation experiments

被引：0

作者：

Biasini, M. ^{[1
,2
]}

Ferro, G. ^{[1
,2
]}

Monge, M.A. ^{[1
,3
]}

Di Francia, G. ^{[4
]}

La Ferrara, V. ^{[4
]}

机构：

[1] ENEA, Via don Fiammelli 2, I-40128 Bologna, Italy

[2] Ist. Naz. di Fisica della Materia

[3] Dipartamento di Fisica, Universidad Carlos III, Av. Universidad 30, E-28911 Leganes (Madrid), Spain

[4] ENEA, Via Vecchio Macello, I-80055 Portici, Italy

来源：

Physica Status Solidi (A) Applied Research | 2000年 / 182卷 / 01期

关键词：

Atoms - Band structure - Charged particles - Crystal defects - Crystals - Photoluminescence - Pore size - Radiation - Spectroscopic analysis - Two dimensional;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

We performed two-dimensional angular correlation of the electron-positron annihilation radiation (2D-ACAR) and positron lifetime measurements on a porous Si sample. From the width of the narrow 2D-ACAR components, attributed to positronium atom, we estimated the average size of the pores to be approx. 2.4 nm and did not find evidence of a preferential propagation of the pores. Moreover, by comparing the 2D-ACAR spectrum with that observed in a pure Si crystal we isolated a further isotropic component to be attributed to crystal defects of unknown origin.

引用

页码：279 / 284