Redistribution of implanted impurities in dual As+ and B+ implanted silicon during annealing

被引：0
作者：
Yokota, Katsuhiro [1 ]
Nakamura, Takafumi [1 ]
Kitagawa, Takaei [1 ]
Miyashita, Fumiyoshi [1 ]
Hirai, Kiyoto [1 ]
Takano, Hiromichi [1 ]
Kumagai, Masao [1 ]
机构：
[1] Kansai Univ, Osaka, Japan
来源：
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms | 1997年 / 127-128卷
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页码：74 / 77
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