RECOMBINATION OF NONEQUILIBRIUM CARRIERS AT HIGH RATES OF EXCITATION OF A METAL-DOPED SILICON SURFACE.

被引：0

作者：

Zuev, V.A.

Litovchenko, V.G.

Milenin, V.V.

Popov, V.G.

Primachenko, V.E.

Snitko, O.V.

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来源：

| 1600年 / 11期

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Compendex;

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摘要：

SEMICONDUCTING SILICON

引用

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[7] ABSORPTION OF LIGHT BY NONEQUILIBRIUM CARRIERS AND RECOMBINATION IN SILICON AT HIGH INJECTION LEVELS
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[10] INVESTIGATION OF RECOMBINATION OF NONEQUILIBRIUM CARRIERS IN SILICON BY MICROWAVE METHOD
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