Solid state quantum computer development in silicon with single ion implantation

被引：0

作者：

Schenkel, T. ^{[1
]}

Persaud, A. ^{[1
]}

Park, S.J. ^{[1
]}

Nilsson, J. ^{[1
,2
]}

Bokor, J. ^{[1
,3
]}

Liddle, J.A. ^{[1
]}

Keller, R. ^{[1
]}

Schneider, D.H. ^{[2
]}

Cheng, D.W. ^{[1
]}

Humphries, D.E. ^{[1
]}

机构：

[1] E. O. Lawrence Berkeley Natl. Lab., Berkeley, CA 94720

[2] Lawrence Livermore Natl. Laboratory, Livermore, CA 94550

[3] Department of Electrical Engineering, University of California, Berkeley, CA 94720

来源：

Journal of Applied Physics | 2003年 / 94卷 / 11期

关键词：

Algorithms - Band structure - Data processing - Doping (additives) - Electrons - Ion implantation - Nanotechnology - Nuclear magnetic resonance - Oscillations - Scanning tunneling microscopy - Semiconducting gallium arsenide - Semiconductor quantum dots - Silicon - Tunnel junctions;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The development of scalable quantum computers was discussed. Integration of single 31P atom arrays with readout single electron transistors (SET) and control gates was required for the fabrication of multi quantum bit (qubit) quantum computer test structures in silicon. A single ion implantation technique was described which placed the individual ions into materials with a resolution of 5-10 nm. Single atom devices were formed which provided access to the physics of 31P qubits in silicon by integration with semiconductor processing.

引用

页码：7017 / 7024

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