共 50 条
- [1] Combination of positron annihilation and scanning tunneling microscopy: A unique approach to characterize defects POSITRON ANNIHILATION, 1997, 255-2 : 494 - 496
- [2] Positron annihilation and scanning tunneling microscopy used to characterize defects in highly Si-doped GaAs Materials Science Forum, 1997, 258-263 (pt 2): : 885 - 892
- [3] Positron annihilation and scanning tunneling microscopy used to characterise defects in highly Si-doped GaAs DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3, 1997, 258-2 : 885 - 892
- [6] Scanning tunneling microscopy of defects in semiconductors IDENTIFICATION OF DEFECTS IN SEMICONDUCTORS, 1999, 51 : 261 - 296
- [9] ATOMIC FORCE MICROSCOPY AND SCANNING TUNNELING MICROSCOPY WITH A COMBINATION ATOMIC FORCE MICROSCOPE SCANNING TUNNELING MICROSCOPE JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03): : 2089 - 2092
- [10] Scanning tunneling microscopy of defects in NbSe2 JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (01): : 60 - 63