THREE-LEVEL METALLIZATION WITH PIQ INSULATION.

被引：0
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作者：
Saiki, Atsushi
Harada, Seiki
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来源：
Electronics & communications in Japan | 1980年 / 63卷 / 06期
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摘要：
The difficult three-level metallization technique has been developed by using the polyimide resin type PIQ insulation method, with which the previous technique using SiO//2 as the inter-layer insulator for IC and LSI can be replaced. The test pattern is sealed with ceramic and the reliability test is conducted.
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页码：89 / 97
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