共 50 条
- [31] Near band-edge photoluminescence in strained and relaxed Si1-xGex/Si quantum wells JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (4A): : 1884 - 1888
- [32] HRXRD studies of strain relaxation in ion-implanted strained Si on relaxed Si1-xGex NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2006, 253 (1-2): : 22 - 26
- [35] Near band-edge photoluminescence in strained and relaxed Si1-xGex/Si quantum wells Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1998, 37 (4 A): : 1884 - 1888
- [37] Phosphorus diffusion in Si1-xGex DIFFUSIONS IN MATERIALS: DIMAT2000, PTS 1 & 2, 2001, 194-1 : 709 - 715
- [38] Growth of strained Si on high-quality relaxed Si1-xGex with an intermediate Si1-yCy layer JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2005, 23 (04): : 1141 - 1145
- [39] Novel strained-Si heterostructure NMOSFETs on solid phase epitaxially grown relaxed Si1-xGex PROCEEDING OF THE TENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOLS I AND II, 2000, 3975 : 883 - 886