AlGaN/GaN current aperture vertical electron transistors with regrown channels

被引：0
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作者：
Ben-Yaacov, Ilan [1 ]
Seck, Yee-Kwang [1 ]
Mishra, Umesh K. [1 ]
DenBaars, Steven P. [2 ]
机构：
[1] Department of Electrical Engineering, University of California, Santa Barbara, CA 93106, United States
[2] Materials Department, University of California, Santa Barbara, CA 93106, United States
来源：
Journal of Applied Physics | 1600年 / 95卷 / 04期
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(Edited Abstract)
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页码：2073 / 2078
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