AlGaN/GaN current aperture vertical electron transistors with regrown channels

被引：0
|
作者：
Ben-Yaacov, Ilan [1 ]
Seck, Yee-Kwang [1 ]
Mishra, Umesh K. [1 ]
DenBaars, Steven P. [2 ]
机构：
[1] Department of Electrical Engineering, University of California, Santa Barbara, CA 93106, United States
[2] Materials Department, University of California, Santa Barbara, CA 93106, United States
来源：
Journal of Applied Physics | 1600年 / 95卷 / 04期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
(Edited Abstract)
引用
收藏
页码：2073 / 2078
相关论文
共 50 条
  • [21] Degradation mechanism of leakage current in AlGaN/GaN high electron mobility transistors
    Ren Jian
    Yan Da-Wei
    Gu Xiao-Feng
    ACTA PHYSICA SINICA, 2013, 62 (15)
  • [22] On the reverse gate leakage current of AlGaN/GaN high electron mobility transistors
    Yan, Dawei
    Lu, Hai
    Cao, Dongsheng
    Chen, Dunjun
    Zhang, Rong
    Zheng, Youdou
    APPLIED PHYSICS LETTERS, 2010, 97 (15)
  • [23] Large gate leakage current in AlGaN/GaN high electron mobility transistors
    Mizuno, Shinya
    Ohno, Yutaka
    Kishimoto, Shigeru
    Maezawa, Koichi
    Mizutani, Takashi
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2002, 41 (08): : 5125 - 5126
  • [24] Lateral and Vertical Transistors Using the AlGaN/GaN Heterostructure
    Chowdhury, Srabanti
    Mishra, Umesh K.
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (10) : 3060 - 3066
  • [25] AlGaN/GaN heterostructure field-effect transistors regrown on nitrogen implanted templates
    Witte, W.
    Reuters, B.
    Fahle, D.
    Behmenburg, H.
    Wang, K. R.
    Trampert, A.
    Hollaender, B.
    Hahn, H.
    Kalisch, H.
    Heuken, M.
    Vescan, A.
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2013, 28 (08)
  • [26] Power Switching Transistors Based on GaN and AlGaN Channels
    Bajaj, Sanyam
    Hung, Ting-Hsiang
    Akyol, Fatih
    Krishnamoorthy, Sriram
    Khandaker, Sadia
    Armstrong, Andrew
    Allerman, Andrew
    Rajan, Siddharth
    WIPDA 2015 3RD IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS, 2015, : 16 - 20
  • [27] Comparative Performance Evaluation for 1.2-10kV Conventional and Superjunction GaN Current Aperture Vertical Electron Transistors
    Torky, Mohamed
    Zhao, Yanzhen
    Lazos, Panagiotis
    Chow, T. Paul
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2023, 220 (16):
  • [28] High current gain GaN bipolar junction transistors with regrown emitters
    Xing, H
    McCarthy, L
    Keller, S
    DenBaars, SP
    Mishra, UK
    2001 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS, 2000, : 365 - 369
  • [29] Vertical electron transport in GaN/AlGaN heterostructures
    Reklaitis, A
    ACTA PHYSICA POLONICA A, 2005, 107 (02) : 261 - 266
  • [30] npn AlGaN/GaN heterojunction bipolar transistors and GaN bipolar junction transistors with regrown C-doped GaAs in the base regions
    Dang, G
    Luo, B
    Zhang, AP
    Cao, XA
    Ren, F
    Pearton, SJ
    Cho, H
    Hobson, WS
    Lopata, J
    van Hove, JM
    Klaassen, JJ
    Polley, CJ
    Wowchack, AM
    Chow, PP
    King, DJ
    SOLID-STATE ELECTRONICS, 2000, 44 (12) : 2097 - 2100
12345