Nonradiative carrier recombination centers of Cl-doped ZnSe epitaxial layers

被引：0

作者：

Yoshino, K. ^{[1
]}

Mikami, H. ^{[1
]}

Yoneta, M. ^{[2
]}

Saito, H. ^{[2
]}

Ohishi, M. ^{[2
]}

Ikari, T. ^{[1
]}

机构：

[1] Dept. of Elec. and Electron. Eng., Miyazaki University, 1-1 Gakuen Kibanadai-nishi, Miyazaki 889-2192, Japan

[2] Department of Applied Physics, Okayama University of Science, 1-1 Ridai-cho, Okayama 700-0005, Japan

来源：

Physica Status Solidi (A) Applied Research | 2000年 / 180卷 / 01期

关键词：

Activation energy - Charge carriers - Chlorine - Crystal defects - Emission spectroscopy - Molecular beam epitaxy - Photoacoustic spectroscopy - Photoluminescence - Semiconducting zinc compounds - Semiconductor doping;

D O I：

10.1002/1521-396X(200007)180:13.0.CO;2-Q

中图分类号：

学科分类号：

摘要：

The photothermal and photoluminescence spectroscopy for nondoped and chlorine (Cl)-doped ZnSe epitaxial layers were carried out at liquid nitrogen and room temperatures. We found two kinds of nonradiative carrier recombination centers which are Cl-related defects with activation energies of about 30 and 120 meV for the first time.

引用

页码：201 / 205