共 50 条
[43]
Nondestructive determination of free-electron concentration and mobility in Hg1-xCdxTe, n-type InSb, and n-type GaAs
[J].
1600, American Inst of Physics, Woodbury, NY, USA (75)
[44]
TUNNEL CONTRIBUTION TO HG1-XCDXTE AND PB1-XSNXTE P-N-JUNCTION DIODE CHARACTERISTICS
[J].
INFRARED PHYSICS,
1980, 20 (06)
:353-361
[46]
Hg1-xCdxTe Based p-i-n IR Photodetector for Free Space Optical Communication
[J].
2017 PROGRESS IN ELECTROMAGNETICS RESEARCH SYMPOSIUM - SPRING (PIERS),
2017,
:544-547