InGaAs/InAlAs/InP collector-up microwave heterojunction bipolar transistors

被引：0
|
作者：
Sato, Hiroya [1 ]
Vlcek, James C. [1 ]
Fonstad, Clifton G. [1 ]
Meskoob, B. [1 ]
Prasad, S. [1 ]
机构：
[1] Dept of Electr Eng & Comput Sci,, MIT, Cambridge, MA, USA
来源：
Electron device letters | 1990年 / 11卷 / 10期
关键词：
Indium Aluminum Arsenide - Indium Gallium Arsenide - Microwave Transistors;
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页码：457 / 459
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