XPS study of the SF6 reactive ion beam etching of silicon at low temperatures

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作者
Tessier, P.Y. [1 ]
Chevolleau, T. [1 ]
Cardinaud, C. [1 ]
Grolleau, B. [1 ]
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[1] Inst. des Matériaux de Nantes, Lab. Plasmas Couches Minces, U., Nantes, France
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页码:280 / 288
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