IMPLANTATION OF Ni THIN FILMS AND SINGLE CRYSTALS WITH Ag IONS.

被引：0

作者：

Wang, Peixuan ^{[1
]}

Thompson, D.A. ^{[1
]}

Smeltzer, W.W. ^{[1
]}

机构：

[1] McMaster Univ, Dep of Engineering, Physics, Hamilton, Ont, Can, McMaster Univ, Dep of Engineering Physics, Hamilton, Ont, Can

来源：

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms | 1985年 / B7-8卷 / pt 1期

关键词：

CRYSTALS - Radiation Effects - ION BEAMS;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

40-130 kev Ag** plus ions have been implanted at 46 K and 300 K into Ni films (25-38 nm thick) deposited on NaCl and Ni single crystals (100) and (110) in the dose range 10**1**1 to 4 multiplied by 10**1**6 cm** minus **2. In-situ backscattering measurements and channeling (in the single crystals) have been carried out. The thin films were also analyzed using TEM, STEM and EDS. For the single crystal samples it is found that 80% of the Ag is substitutional at the Ag saturation concentration (7-8 at. % max. concentration). Annealing at 623 K for 1 h, decreases the substitutional fraction to 60%. Bombardment of the thin films at both 46 K and 300 K results in significant recrystallization and grain growth when the ion dose APP GRTH 10**1**5 cm** minus **2.

引用

页码：97 / 102

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