InGaN-based blue light-emitting diodes and laser diodes

被引：0
|
作者：
R and D Department, Nichia Chem. Indust., Ltd., 491 O., Tokushima, Japan [1 ]
机构：
来源：
J Cryst Growth | / 290-295期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [11] Dichromatic color tuning with InGaN-based light-emitting diodes
    Fellows, Natalie N.
    Sato, Hitoshi
    Lin, You-da
    Chung, Roy B.
    DenBaars, Steven P.
    Nakamura, Shuji
    APPLIED PHYSICS LETTERS, 2008, 93 (12)
  • [12] Characteristics of InGaN-based UV/blue/green/amber/red light-emitting diodes
    Mukai, Takashi
    Yamada, Motokazu
    Nakamura, Shuji
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1999, 38 (7 A): : 3976 - 3981
  • [13] Ultraviolet, blue, and green InGaN-based light-emitting diodes functionalized with ZnO nanorods
    Jeong, Hyun
    Salas-Montiel, Rafael
    Lerondel, Gilles
    Jeong, Mun Seok
    JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 708 : 612 - 618
  • [14] Monolithic InGaN-based white light-emitting diodes with blue, green, and amber emissions
    Lee, Sung-Nam
    Paek, H. S.
    Kim, H.
    Jang, T.
    Park, Y.
    APPLIED PHYSICS LETTERS, 2008, 92 (08)
  • [15] Investigation of sidewall passivation mechanism of InGaN-based blue microscale light-emitting diodes
    Son, Kyung Rock
    Murugadoss, Vignesh
    Kim, Kyeong Heon
    Kim, Tae Geun
    APPLIED SURFACE SCIENCE, 2022, 584
  • [16] Characteristics of InGaN-based UV/blue/green/amber/red light-emitting diodes
    Mukai, T
    Yamada, M
    Nakamura, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1999, 38 (7A): : 3976 - 3981
  • [17] InGaN-based Flexible Light Emitting Diodes
    Bayram, C.
    GALLIUM NITRIDE MATERIALS AND DEVICES XII, 2017, 10104
  • [18] Current and temperature dependences of electroluminescence of InGaN-based UV/blue/green light-emitting diodes
    Mukai, Takashi
    Yamada, Motokazu
    Nakamura, Shuji
    Japanese Journal of Applied Physics, Part 2: Letters, 1998, 37 (11 B):
  • [19] FDTD Modeling of InGaN-Based Light-Emitting Diodes with Microsphere Arrays
    Zhu, Peifen
    Zhang, Jing
    Liu, Guangyu
    Tansu, Nelson
    2012 IEEE PHOTONICS CONFERENCE (IPC), 2012, : 433 - 434
  • [20] InGaN-based single-chip multicolor light-emitting diodes
    Azuhata, T
    Homma, T
    Ishikawa, Y
    Chichibu, SF
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2003, 42 (5B): : L497 - L498
12345