Comments on 'misorientation in GaAs on Si grown by migration-enhanced epitaxy'

被引：0

作者：

Riesz, Ferenc ^{[1
]}

机构：

[1] Research Inst for Technical Physics, of the Hungarian Acad of Sciences, Budapest, Hungary

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1993年 / 32卷 / 10期

关键词：

11;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：4754 / 4755

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[31] EFFECTS OF ANNEALING ON THE STRUCTURAL-PROPERTIES OF GAAS ON SI(100) GROWN AT A LOW-TEMPERATURE BY MIGRATION-ENHANCED EPITAXY
NOZAWA, K
HORIKOSHI, Y
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (04): : L540 - L543
[32] STRAIN AND MISORIENTATION IN GAAS GROWN ON SI(001) BY ORGANOMETALLIC EPITAXY
GHANDHI, SK
AYERS, JE
APPLIED PHYSICS LETTERS, 1988, 53 (13) : 1204 - 1206
[33] MIGRATION-ENHANCED EPITAXY ON A (111)B ORIENTED GAAS SUBSTRATE
IMAMOTO, H
SATO, F
IMANAKA, K
SHIMURA, M
APPLIED PHYSICS LETTERS, 1989, 55 (02) : 115 - 116
[34] INCREASE OF ELECTRICAL ACTIVATION AND MOBILITY OF SI-DOPED GAAS, GROWN AT LOW SUBSTRATE TEMPERATURES, BY THE MIGRATION-ENHANCED EPITAXY METHOD
TADAYON, B
TADAYON, S
SPENCER, MG
HARRIS, GL
GRIFFIN, J
EASTMAN, LF
JOURNAL OF APPLIED PHYSICS, 1990, 67 (01) : 589 - 591
[35] OPTICAL ANALYSIS OF INAS HETEROSTRUCTURES GROWN BY MIGRATION-ENHANCED EPITAXY
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YANO, M
FURUSE, H
NASU, N
IWAI, Y
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (01) : S121 - S124
[36] ANOMALOUS DISTRIBUTION OF IN ATOMS IN GAAS DURING MIGRATION-ENHANCED EPITAXY
YAMAGUCHI, H
HORIKOSHI, Y
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (11): : L2010 - L2012
[37] Controlled formation of misfit dislocations for heteroepitaxial growth of GaAs on (100) Si by migration-enhanced epitaxy
Stolz, Wolfgang
Horikoshi, Yoshiji
Naganuma, Mitsuru
Japanese Journal of Applied Physics, Part 2: Letters, 1988, 27 pt 2 (06):
[38] CONTROLLED FORMATION OF MISFIT DISLOCATIONS FOR HETEROEPITAXIAL GROWTH OF GAAS ON (100) SI BY MIGRATION-ENHANCED EPITAXY
STOLZ, W
HORIKOSHI, Y
NAGANUMA, M
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (08) : C379 - C379
[39] CONTROLLED FORMATION OF MISFIT DISLOCATIONS FOR HETEROEPITAXIAL GROWTH OF GAAS ON (100) SI BY MIGRATION-ENHANCED EPITAXY
STOLZ, W
HORIKOSHI, Y
NAGANUMA, M
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (06): : L1140 - L1143
[40] Selective growth of GaAs on GaAs (111)B substrates by migration-enhanced epitaxy
Suzuki, K
Ito, M
Horikoshi, Y
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (11): : 6197 - 6201

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