Comments on 'misorientation in GaAs on Si grown by migration-enhanced epitaxy'

被引：0
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作者：
Riesz, Ferenc [1 ]
机构：
[1] Research Inst for Technical Physics, of the Hungarian Acad of Sciences, Budapest, Hungary
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 1993年 / 32卷 / 10期
关键词：
11;
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页码：4754 / 4755
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