Issues and reliability of high-density FeRAMs

被引：0

作者：

Noh, Keum Hwan ^{[1
]}

Yang, Beelyong ^{[2
]}

Lee, Seok Won ^{[1
]}

Lee, Seaung-Suk ^{[1
]}

Kang, Hee-Bok ^{[1
]}

Park, Young-Jin ^{[1
]}

机构：

[1] New Device Team, Memory R and D Division, Hynix Semiconductor Inc., San 136-1 Ami-ri Bubal-eub Ichon-si, Kyoungki-do 467-701, Korea, Republic of

[2] Dept. of Materials Science and Eng., Kumoh National Inst. of Technology, 188 Shinpyong-dong, Gumi-si, Gyeongbuk 730-701, Korea, Republic of

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2003年 / 42卷 / 4 B期

关键词：

Extra sensing margin - Ferroelectric capacitor - Ferroelectric random access memory - Imprint - Retention;

D O I：

10.1143/jjap.42.2096

中图分类号：

学科分类号：

摘要：

引用

页码：2096 / 2099

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