Issues and reliability of high-density FeRAMs

被引：0
|
作者：
Noh, Keum Hwan [1 ]
Yang, Beelyong [2 ]
Lee, Seok Won [1 ]
Lee, Seaung-Suk [1 ]
Kang, Hee-Bok [1 ]
Park, Young-Jin [1 ]
机构：
[1] New Device Team, Memory R and D Division, Hynix Semiconductor Inc., San 136-1 Ami-ri Bubal-eub Ichon-si, Kyoungki-do 467-701, Korea, Republic of
[2] Dept. of Materials Science and Eng., Kumoh National Inst. of Technology, 188 Shinpyong-dong, Gumi-si, Gyeongbuk 730-701, Korea, Republic of
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2003年 / 42卷 / 4 B期
关键词：
Extra sensing margin - Ferroelectric capacitor - Ferroelectric random access memory - Imprint - Retention;
D O I：
10.1143/jjap.42.2096
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：2096 / 2099
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