Water absorption properties of fluorine-doped SiO2 films using plasma-enhanced chemical vapor deposition

被引：0

作者：

Miyajima, Hideshi ^{[1
]}

Katsumata, Ryota ^{[1
]}

Nakasaki, Yasushi ^{[1
]}

Nishiyama, Yukio ^{[1
]}

Hayasaka, Nobuo ^{[1
]}

机构：

[1] Toshiba Corp, Kawasaki, Japan

来源：

| 1996年 / JJAP, Minato-ku, Japan卷 / 35期

关键词：

Chemical bonds - Chemical vapor deposition - Dissociation - Fluorine - Ion bombardment - Mass spectrometers - Permittivity - Plasma applications - Semiconducting silicon compounds - Semiconductor doping - Silica - Water absorption;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The water absorption properties of a PE-CVD (plasma-enhanced chemical vapor deposition) fluorine-doped SiO2 film with a low dielectric constant were studied. It was concluded that highly stable F-doped SiO2 film was obtained at F contents from 2.0% to 4.2% (3.2&lek&le3.6) using high-density plasma CVD. However, at F contents higher than 4.2% (k2 bonds, which are highly reactive with water. On the other hand, water absorption was observed at every F content for conventional plasma CVD films. Through gas phase component analysis and investigation of the incident ion energy distribution using a quadrupole mass spectrometer, it was confirmed that a high efficiency of gas dissociation and high-energy ion bombardment are the keys to obtaining high-quality films with a high resistance to water absorption.

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