Effects of extended defects on the properties of intrinsic and extrinsic point defects in silicon

被引：0
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作者：
Justo, J.F. [1 ]
Antonelli, A. [2 ]
Schmidt, T.M. [3 ]
Fazzio, A. [1 ]
机构：
[1] Institute de Física da USP, CP 66318, CEP 05315-970, São Paulo-SP, Brazil
[2] Instituto de Física Gleb Wataghin, UNICAMP, CEP 13083-970, Campinas-SP, Brazil
[3] Universidade Federal de Uberlândia, CP 593, CEP 38400-902, Uberlandia-MG, Brazil
来源：
Physica B: Condensed Matter | 1999年 / 273卷
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页码：473 / 475
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