Highly anisotropic silicon and polysilicon room-temperature etching using fluorine-based high density plasmas

被引：0
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作者：
Tserepi, A. [1 ]
Gogolides, E. [1 ]
Cardinaud, C. [1 ]
Rolland, L. [1 ]
Turban, G. [1 ]
机构：
[1] Inst of Microelectronics-IMEL, Aghia Paraskevi, Greece
来源：
Microelectronic Engineering | 1998年 / 41-42卷
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页码：411 / 414
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